English
简体中文
FIXED IND 150UH 1.2A 296 MOHM
MOSFET N-CH 100V 22A TO220-3F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 24mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1190 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.1W (Ta), 27W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMSF4N01HDR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF3415PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 43A TO220AB |
|
NVMFS5C646NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
SCTWA90N65G2V-4STMicroelectronics |
TRANS SJT N-CH 650V 119A HIP247 |
|
DMN3033LSNQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A SC59 |
|
IRF820ASPBFVishay / Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
|
FQAF33N10Rochester Electronics |
MOSFET N-CH 100V 25.8A TO3PF |
|
TJ50S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 50A DPAK |
|
IRFS540ARochester Electronics |
MOSFET N-CH 100V 17A TO220F |
|
FDD8N50NZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6.5A DPAK |
|
FDBL86361-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 300A 8HPSOF |
|
SIHF520STRL-GE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
|
FDMS7694Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13.2A/20A 8PQFN |