English
简体中文
RES SMD 1% 1W MELF
HEATSINK 45X45X25MM L-TAB
MOSFET N-CH 30V 50A TO252-31
DC DC CONVERTER 36V 50W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1900 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 47W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3-11 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM130N30D3Rectron USA |
MOSFET N-CHANNEL 30V 130A 8DFN |
|
AUIRFSL4010Rochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
STW31N65M5STMicroelectronics |
MOSFET N-CH 650V 22A TO247 |
|
2SK3634-AZRochester Electronics |
MOSFET N-CH 200V 6A TO251 |
|
RM47N650T7Rectron USA |
MOSFET N-CHANNEL 650V 47A TO247 |
|
TPCA8055-H,LQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 56A 8SOP |
|
IXTH68P20TWickmann / Littelfuse |
MOSFET P-CH 200V 68A TO247 |
|
NVMFS5833NT3GRochester Electronics |
MOSFET N-CH 40V 16A 5DFN |
|
IPP052N06L3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
SI3433CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 6A 6TSOP |
|
BUK7509-75A,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.009OHM, 1 |
|
NTHD4P02FT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A CHIPFET |
|
STH260N6F6-6STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6 |