







MOSFET N-CH 600V 13A TO220AB
MOSFET N-CH 20V 900MA 3DFN
IC AMP REC FILTR 10UMAX
SI-M1B-ML
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 900mA (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 600mOhm @ 200mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 500 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 37 pF @ 16 V |
| 场效应管特征: | - |
| 功耗(最大值): | 400mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | X1-DFN1212-3 |
| 包/箱: | 3-UDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
TSM70N750CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 6A TO251 |
|
|
IPA65R095C7XKSA1Rochester Electronics |
MOSFET N-CH 650V 12A TO220-FP |
|
|
RQ3L050GNTBROHM Semiconductor |
MOSFET N-CHANNEL 60V 12A 8HSMT |
|
|
IRFP450APBFVishay / Siliconix |
MOSFET N-CH 500V 14A TO247-3 |
|
|
SIHD3N50DT4-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
|
IRFB38N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 43A TO220AB |
|
|
SI4800BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A 8SO |
|
|
NVGS4111PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.7A 6TSOP |
|
|
TK13A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 13A TO220SIS |
|
|
FDP032N08Rochester Electronics |
120A, 75V, 0.0032OHM, N CHANNEL |
|
|
IXFP72N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 72A TO220AB |
|
|
SQJA88EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8 |
|
|
IRFIB7N50APBFVishay / Siliconix |
MOSFET N-CH 500V 6.6A TO220-3 |