类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 60mOhm @ 3.7A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 750 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 630mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-TSOP |
包/箱: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK13A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 13A TO220SIS |
|
FDP032N08Rochester Electronics |
120A, 75V, 0.0032OHM, N CHANNEL |
|
IXFP72N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 72A TO220AB |
|
SQJA88EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8 |
|
IRFIB7N50APBFVishay / Siliconix |
MOSFET N-CH 500V 6.6A TO220-3 |
|
IPA60R400CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.3A TO220-FP |
|
SI4630DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 25V 40A 8SO |
|
PMV48XPARNexperia |
MOSFET P-CH 20V 3.5A TO236AB |
|
FDD3672-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A TO252AA |
|
AOT262LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 20A/140A TO220 |
|
AUIRLS4030-7TRLRochester Electronics |
MOSFET N-CH 100V 190A D2PAK |
|
AOTF66616LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 38A/72.5A TO220F |
|
IQE006NE2LM5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 41A/298A 8TSON |