English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 52mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1285 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252AA |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RMW200N03TBROHM Semiconductor |
MOSFET N-CH 30V 20A 8PSOP |
|
FQP8N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8A TO220-3 |
|
IRFD9010Vishay / Siliconix |
MOSFET P-CH 50V 1.1A 4DIP |
|
NTP35N15GRochester Electronics |
MOSFET N-CH 150V 37A TO220AB |
|
BSS138WH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 280MA SOT323-3 |
|
IPB037N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A D2PAK |
|
SPB02N60S5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 1.8A TO263-3 |
|
IRFP460LCPBFVishay / Siliconix |
MOSFET N-CH 500V 20A TO247-3 |
|
NVMFS5C673NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
|
BSZ035N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/40A 8TSDSON |
|
R6020JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 20A LPTS |
|
IRFSL3207ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO262 |
|
AON7506Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12A/12A 8DFN |
