English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1851 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AC |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTH16P60PWickmann / Littelfuse |
MOSFET P-CH 600V 16A TO247 |
|
AO4286Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 4A 8SOIC |
|
IPB80N03S4L-03ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SMMBFJ310LT3Rochester Electronics |
RF N-CHANNEL, JUNCTION FET |
|
TK8A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 7.8A TO220SIS |
|
FQH140N10Rochester Electronics |
MOSFET N-CH 100V 140A TO247-3 |
|
NTD85N02R-001Rochester Electronics |
MOSFET N-CH 24V 12A/85A IPAK |
|
FQB5N60CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A D2PAK |
|
SIB456DK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 6.3A PPAK SC75 |
|
SSM6J424TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A UF6 |
|
SIS472ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A PPAK1212-8 |
|
IRF7526D1TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 2A MICRO8 |
|
FDMS8320LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 36A/100A 8PQFN |
