English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1515 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7526D1TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 2A MICRO8 |
|
FDMS8320LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 36A/100A 8PQFN |
|
PXN9R0-30QLJNexperia |
PXN9R0-30QL/SOT8002/MLPAK33 |
|
SI7850DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 6.2A PPAK SO-8 |
|
BUK962R8-60E,118Nexperia |
MOSFET N-CH 60V 120A D2PAK |
|
DMN2028USS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 7.3A 8SO |
|
STW74NF30STMicroelectronics |
MOSFET N-CH 300V 60A TO247 |
|
STP4N150STMicroelectronics |
MOSFET N-CH 1500V 4A TO220AB |
|
SIHU5N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO251AA |
|
IXFP16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO220AB |
|
IPD65R660CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 700V 6A TO252-3-313 |
|
STF9NM60NSTMicroelectronics |
MOSFET N-CH 600V 6.5A TO220FP |
|
2SK2480-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
