类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK7M15-40HXNexperia |
MOSFET N-CH 40V 30A LFPAK33 |
|
UPA622TT-E1-ARochester Electronics |
MOSFET N-CH 30V 3A 6WSOF |
|
STN1NK80ZSTMicroelectronics |
MOSFET N-CH 800V 250MA SOT223 |
|
CPH3456-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A 3CPH |
|
FDD5670Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
NTD4806NAT4GRochester Electronics |
MOSFET N-CH 30V 11.3A/79A DPAK |
|
SI6415DQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 6.5A 8TSSOP |
|
TK60F10N1L,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 60A TO220SM |
|
DMN10H220L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.4A SOT23 |
|
FDD6N50TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
|
STF6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A TO220FP |
|
IRF7811AVPBFRochester Electronics |
MOSFET N-CH 30V 10.8A 8SO |
|
IRFH7914TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 15A/35A 8PQFN |