English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 19mOhm @ 6.5A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-TSSOP |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK60F10N1L,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 60A TO220SM |
|
DMN10H220L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.4A SOT23 |
|
FDD6N50TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
|
STF6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A TO220FP |
|
IRF7811AVPBFRochester Electronics |
MOSFET N-CH 30V 10.8A 8SO |
|
IRFH7914TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 15A/35A 8PQFN |
|
CSD25202W15Texas Instruments |
MOSFET P-CH 20V 4A 9DSBGA |
|
IXTY1N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 1A TO252 |
|
IPU60R950C6AKMA1Rochester Electronics |
MOSFET N-CH 600V 4.4A TO251-3 |
|
IPP80R600P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-3 |
|
SI2325DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 530MA SOT23-3 |
|
R4008ANDTLROHM Semiconductor |
MOSFET N-CH 400V 8A CPT3 |
|
IRFR210TRLPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
