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| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 26mOhm @ 2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.05V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.5 nC @ 4.5 V |
| vgs (最大值): | -6V |
| 输入电容 (ciss) (max) @ vds: | 1010 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 9-DSBGA |
| 包/箱: | 9-UFBGA, DSBGA |
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