English
简体中文
MOSFET N-CH 300V 120A TO247
CONN HEADER VERT 30POS 2.54MM
IC FLASH 16MBIT SPI/QUAD 8SOIC
MICRO GAMEPAD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 11mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 10.5 nF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 735W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP65R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA26N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 26A TO263AA |
|
NVD6820NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 90V 10A/50A DPAK |
|
DMP1096UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 2.6A U-WLB1010-4 |
|
STD4N80K5STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |
|
FDA70N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 70A TO3PN |
|
SSM3J134TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 3.2A UFM |
|
IPS70R360P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO251-3 |
|
SPB100N03S203TIR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO263-3 |
|
IXFP30N60XWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO220 |
|
IPT60R022S7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23A 8HSOF |
|
R5009ANXROHM Semiconductor |
MOSFET N-CH 500V 9A TO220 |
|
IRFS7787TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 76A D2PAK |