English
简体中文
2.5X2.0 30PPM @25C 30PPM (-20 TO
MOSFET N-CH 800V 13A ISOPLUS247
MOSFET N-CHANNEL 650V 15A TO220F
QFN-36-THIN TO DIP-36 SMT ADAPTE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 420mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 7200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RM15N650TIRectron USA |
MOSFET N-CHANNEL 650V 15A TO220F |
|
BSC084P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 14.9A 8TDSON |
|
IRFR1N60ATRLPBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
NVD6495NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25A DPAK |
|
IXFP14N85XWickmann / Littelfuse |
MOSFET N-CH 850V 14A TO220AB |
|
CSD19532KTTTexas Instruments |
MOSFET N-CH 100V 200A DDPAK |
|
STW33N60DM2STMicroelectronics |
MOSFET N-CH 600V 24A TO247 |
|
NVTFS5820NLWFTAGRochester Electronics |
60V, 0.0115OHM, N-CHANNEL, MOSF |
|
BSS138AKARNexperia |
MOSFET N-CH 60V 200MA TO236AB |
|
IXFH11N80Wickmann / Littelfuse |
MOSFET N-CH 800V 11A TO247AD |
|
ATP302-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 70A ATPAK |
|
IXFP12N50PWickmann / Littelfuse |
MOSFET N-CH 500V 12A TO220AB |
|
SIHG20N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 20A TO247AC |