English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | C3M™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 455mOhm @ 3.6A, 15V |
| vgs(th) (最大值) @ id: | 3.6V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 15 V |
| vgs (最大值): | +15V, -4V |
| 输入电容 (ciss) (max) @ vds: | 345 pF @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPW16N50C3Rochester Electronics |
SPW16N50 - 500V COOLMOS N-CHANNE |
|
IPW60R099C7Rochester Electronics |
MOSFET N-CH 600V 22A TO247 |
|
BS170-D75ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
MSJP11N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH 650V 11A TO220AB |
|
SPD15N06S2L64Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJA78EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 72A PPAK SO-8 |
|
FDMS86201Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 11.6A/49A 8PQFN |
|
HP4936DYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RTQ030P02TRROHM Semiconductor |
MOSFET P-CH 20V 3A TSMT6 |
|
PMFPB8032XP,115Nexperia |
MOSFET P-CH 20V 2.7A HUSON6 |
|
RFP70N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 70A TO220-3 |
|
TW070J120B,S1QToshiba Electronic Devices and Storage Corporation |
SICFET N-CH 1200V 36A TO3P |
|
IRF343Rochester Electronics |
MOSFET N-CH 350V 8A TO3 |
