English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 27A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 320mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264AA (IXFK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD35N10S3L26ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-31 |
|
NTR4003NT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
TK290P60Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A DPAK |
|
ZXMN2A03E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.7A SOT23-6 |
|
IXTH76N25TWickmann / Littelfuse |
MOSFET N-CH 250V 76A TO247 |
|
IRFBE20PBFVishay / Siliconix |
MOSFET N-CH 800V 1.8A TO220AB |
|
RSR025N03TLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
|
APT8011JLLRoving Networks / Microchip Technology |
MOSFET N-CH 800V 51A ISOTOP |
|
MTB50P03HDLRochester Electronics |
MOSFET P-CH 30V 50A D2PAK |
|
IXFX200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A PLUS247-3 |
|
RJK005N03FRAT146ROHM Semiconductor |
MOSFET N-CH 30V 500MA SMT3 |
|
IRFH5304TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 22A/79A 8PQFN |
|
AOD380A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO252 |
