类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 25mOhm @ 25A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 5 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 4.9 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFX200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A PLUS247-3 |
|
RJK005N03FRAT146ROHM Semiconductor |
MOSFET N-CH 30V 500MA SMT3 |
|
IRFH5304TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 22A/79A 8PQFN |
|
AOD380A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO252 |
|
SI3474DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 3.8A 6TSOP |
|
IPD14N06S280ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 17A TO252-31 |
|
MCH6351-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 9A 6MCPH |
|
DMN62D0U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 380MA SOT23 |
|
TSM900N10CH X0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 15A TO251 |
|
ATP216-TL-HRochester Electronics |
MOSFET N-CH 50V 35A ATPAK |
|
BSS123W-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT323 |
|
UF3SC120040B7SUnitedSiC |
1200V/40MOHM, SIC, STACKED FAST |
|
DMN3007LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A 8SOP |