AUTOMOTIVE HEXFET POWER MOSFET
MACHINE SCREW FLAT SLOTTED M3
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 60mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 5 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 480 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.8W (Ta), 45W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPT65R195G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A 8HSOF |
|
DMTH3004LFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A PWRDI3333 |
|
TK10V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A 4DFN |
|
STD1NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 1A DPAK |
|
SQJ840EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
|
FDU6N50TURochester Electronics |
MOSFET N-CH 500V 6A I-PAK |
|
MMIX1F44N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 30A 24SMPD |
|
AOI423Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO251A |
|
BUK7Y54-75B,115Rochester Electronics |
PFET, 21.4A I(D), 75V, 0.054OHM, |
|
TSM026NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 168A 8PDFN |
|
IPP65R095C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO220-3 |
|
MTM761100LBFPanasonic |
MOSFET P-CH 12V 4A WSMINI6 |
|
CMUDM8005 TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 650MA SOT523 |