MOSFET N-CH 30V 3.6A SOT-23F
CONN JACK R/A PCB 5.5X2.1MM
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3.6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 40mOhm @ 1.8A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
vgs (最大值): | 12V |
输入电容 (ciss) (max) @ vds: | 590 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23F |
包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP3652Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A/61A TO220-3 |
|
DMP1100UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 2.5A WLB0808 |
|
STP10P6F6STMicroelectronics |
MOSFET P-CH 60V 10A TO220 |
|
SIR638ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8 |
|
FQB9N25CTMRochester Electronics |
MOSFET N-CH 250V 8.8A D2PAK |
|
FQI6N50TURochester Electronics |
MOSFET N-CH 500V 5.5A I2PAK |
|
DN3145N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 450V 100MA TO243AA |
|
PMPB25ENEXNexperia |
MOSFET DFN2020MD-6 |
|
STP4NK80ZFPSTMicroelectronics |
MOSFET N-CH 800V 3A TO220FP |
|
STFI6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAKFP |
|
MIC94051YM4-TRRoving Networks / Microchip Technology |
MOSFET P-CH 6V 1.8A SOT143 |
|
STW28N65M2STMicroelectronics |
MOSFET N-CH 650V 20A TO247 |
|
IXFA8N85XHVWickmann / Littelfuse |
MOSFET N-CH 850V 8A TO263HV |