FIXED IND 18NH 370MA 270MOHM SMD
3.2X2.5 30PPM @25C 30PPM (-40 TO
MOSFET N-CH 20V 600MA DFN1006-3
MEMS OSC LP 125MHZ LVCMOS -40C-1
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 600mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
rds on (max) @ id, vgs: | 620mOhm @ 600mA, 4.5V |
vgs(th) (最大值) @ id: | 950mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.7 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 21.3 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 360mW (Ta), 2.7W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN1006-3 |
包/箱: | SC-101, SOT-883 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9907-40ATC,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220-5 |
|
SI5404BDC-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 5.4A 1206-8 |
|
FQD630TMRochester Electronics |
MOSFET N-CH 200V 7A DPAK |
|
IPB60R190C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A D2PAK |
|
IPD35N12S3L24ATMA1Rochester Electronics |
IPD35N12 - 120V-300V N-CHANNEL A |
|
R6020FNXROHM Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
|
AOT2610LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 9A/55A TO220 |
|
5LP01M-TL-ERochester Electronics |
MOSFET P-CH 50V 70MA 3MCP |
|
IXFT16N80PWickmann / Littelfuse |
MOSFET N-CH 800V 16A TO268 |
|
SPA15N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO220-FP |
|
IRF6620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 27A DIRECTFET |
|
STW33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO247 |
|
NVD5C478NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/45A DPAK |