English
简体中文
CAP FILM 1UF 5% 250VDC RADIAL
MOSFET N-CH 20V 5.4A 1206-8
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 28mOhm @ 5.4A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 1206-8 ChipFET™ |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQD630TMRochester Electronics |
MOSFET N-CH 200V 7A DPAK |
|
IPB60R190C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A D2PAK |
|
IPD35N12S3L24ATMA1Rochester Electronics |
IPD35N12 - 120V-300V N-CHANNEL A |
|
R6020FNXROHM Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
|
AOT2610LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 9A/55A TO220 |
|
5LP01M-TL-ERochester Electronics |
MOSFET P-CH 50V 70MA 3MCP |
|
IXFT16N80PWickmann / Littelfuse |
MOSFET N-CH 800V 16A TO268 |
|
SPA15N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO220-FP |
|
IRF6620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 27A DIRECTFET |
|
STW33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO247 |
|
NVD5C478NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/45A DPAK |
|
STP52P3LLH6STMicroelectronics |
MOSFET N-CHANNEL 30V 52A TO220 |
|
STF8N65M5STMicroelectronics |
MOSFET N-CH 650V 7A TO220FP |