English
简体中文
MOSFET P-CH 20V 4A ES6
CABLE 7COND 16AWG BLACK 2500'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 40.7mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 14.1 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 970 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | ES6 |
| 包/箱: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMF780SN,115Rochester Electronics |
MOSFET N-CH 60V 570MA SOT323-3 |
|
SIHP6N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5A TO220AB |
|
PSMN1R8-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
STFI34N65M5STMicroelectronics |
MOSFET N CH 650V 28A I2PAKFP |
|
SI2300DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 3.6A SOT23-3 |
|
SQJA46EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STFI5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A I2PAKFP |
|
DMP2039UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 6.7A 6UDFN |
|
SIHB16N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 16A D2PAK |
|
SIHFPS40N50L-GE3Vishay / Siliconix |
POWER MOSFET SUPER-247, 100 M @ |
|
STY140NS10STMicroelectronics |
MOSFET N-CH 100V 140A MAX247 |
|
IPZ40N04S58R4ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON-32 |
|
TSM1NB60CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 1A TO251 |