English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 135mOhm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 3.4 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 310 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | 1.25W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSMT5 |
| 包/箱: | SOT-23-5 Thin, TSOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTB6410ANGRochester Electronics |
MOSFET N-CH 100V 76A D2PAK |
|
FDD1600N10ALZDRochester Electronics |
MOSFET N-CH 100V 6.8A TO252-4L |
|
RJ1U330AAFRGTLROHM Semiconductor |
MOSFET N-CH 250V 33A LPTS |
|
BUK964R7-80E,118Nexperia |
MOSFET N-CH 80V 120A D2PAK |
|
GKI04101Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 9A 8DFN |
|
TSM7N90CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 7A ITO220AB |
|
RM80N80HDRectron USA |
MOSFET N-CHANNEL 80V 80A TO263-2 |
|
PSMN7R0-100BS,118Nexperia |
MOSFET N-CH 100V 100A D2PAK |
|
SI4430BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 14A 8SO |
|
RSQ035N06HZGTRROHM Semiconductor |
MOSFET N-CH 60V 3.5A TSMT6 |
|
IPB80P03P4-05ATMA1Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
PSMN2R4-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
2SK3484-AZRenesas Electronics America |
MOSFET N-CH 100V 16A TO251 |
