English
简体中文
MOSFET N-CH 800V 5.4A TO220AB
IC SRAM 16KBIT PARALLEL 52PLCC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 940mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 827 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 78W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RFP14N05LRochester Electronics |
MOSFET N-CH 50V 14A TO220-3 |
|
STF40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A TO220FP |
|
STFI13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A I2PAKFP |
|
IRFR9120TRPBFVishay / Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
|
VN1206L-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 120V 230MA TO92-3 |
|
IPL60R365P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10A 4VSON |
|
STW8N120K5STMicroelectronics |
MOSFET N-CH 1200V 6A TO247 |
|
STU7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A IPAK |
|
FDMT80060DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 43A/292A 8DUAL |
|
IPA60R385CPRochester Electronics |
IPA60R385 - 600V COOLMOS N-CHANN |
|
SPA03N60C3XKRochester Electronics |
SPA03N60 - 600V COOLMOS N-CHANNE |
|
IXFA60N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 60A TO263AA |
|
CWDM305P TR13 PBFREECentral Semiconductor |
MOSFET P-CH 30V 5.3A 8SOIC |