类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Ta), 37A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 20mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.7V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2300 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta), 60W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP160N75F3STMicroelectronics |
MOSFET N-CH 75V 120A TO220AB |
|
BUK6E4R0-75C,127Rochester Electronics |
MOSFET N-CH 75V 120A I2PAK |
|
IRFU9214PBFVishay / Siliconix |
MOSFET P-CH 250V 2.7A TO251AA |
|
SI7386DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
HTNFET-THoneywell Aerospace |
MOSFET N-CH 55V 4POWER TAB |
|
DMTH8012LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 50A TO252 |
|
MMDF1300R2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
UPA2726UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 20A 8DFN |
|
FDB6035LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
VS-FA40SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 40A SOT-227 |
|
APT8043SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 20A D3PAK |
|
SUM55P06-19L-E3Vishay / Siliconix |
MOSFET P-CH 60V 55A TO263 |
|
IRFS9N60ATRRPBFVishay / Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |