类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPA2726UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 20A 8DFN |
|
FDB6035LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
VS-FA40SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 40A SOT-227 |
|
APT8043SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 20A D3PAK |
|
SUM55P06-19L-E3Vishay / Siliconix |
MOSFET P-CH 60V 55A TO263 |
|
IRFS9N60ATRRPBFVishay / Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
|
BSC028N06LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 23A/100A TDSON |
|
STB5NK52ZD-1STMicroelectronics |
MOSFET N-CH 520V 4.4A I2PAK |
|
FDC6308PRochester Electronics |
P-CHANNEL MOSFET |
|
MTB50P03HDLT4Rochester Electronics |
MOSFET P-CH 30V 50A D2PAK |
|
IPA60R520E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 8.1A TO220-FP |
|
TK65S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 65A DPAK |
|
DMP4013LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 10.3A PWRDI3333 |