MOSFET N-CH 500V 3A TO252AA
DC DC CONVERTER 12V 150W
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 3.2Ohm @ 2.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 175 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 69W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252AA |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EPC2019EPC |
GANFET N-CH 200V 8.5A DIE |
|
NTR4101PT1HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.8A SOT23-3 |
|
IRFH8201TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 49A/100A 8PQFN |
|
STH240N75F3-6STMicroelectronics |
MOSFET N-CH 75V 180A H2PAK-6 |
|
MCH3479-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A SC70 |
|
IPI076N12N3GAKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 100A TO262-3 |
|
IPW60R040CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 50A TO247-3 |
|
STE48NM50STMicroelectronics |
MOSFET N-CH 550V 48A ISOTOP |
|
AOI4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO251A |
|
IRLU2905ZPBFRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 4 |
|
2SK1401A-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR3709ZPBFRochester Electronics |
MOSFET N-CH 30V 86A DPAK |
|
TSM70N380CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 11A ITO220AB |