类型 | 描述 |
---|---|
系列: | TrenchFET® Gen III |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5.1mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4660 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 57W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8S (3.3x3.3) |
包/箱: | PowerPAK® 1212-8S |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RF1S70N06SM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFT220N20X3HVWickmann / Littelfuse |
MOSFET N-CH 200V 220A TO268HV |
|
RZR025P01TLROHM Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3 |
|
BSS316NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 1.4A SOT23-3 |
|
IRFB7734PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 183A TO220AB |
|
RFL4N15Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
PSMN5R6-100XS,127Rochester Electronics |
MOSFET N-CH 100V 61.8A TO220F |
|
STW24N60DM2STMicroelectronics |
MOSFET N-CH 600V 18A TO247 |
|
CMUDM7005 TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 650MA SOT523 |
|
AONS36316Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/32A 8DFN |
|
STH310N10F7-2STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
|
R6006JND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 6A TO252 |
|
STP13NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |