类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 5.6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 25mOhm @ 8.7A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCP600N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A TO220-3 |
|
CSD19534KCSTexas Instruments |
MOSFET N-CH 100V 100A TO220-3 |
|
SCH2080KECROHM Semiconductor |
SICFET N-CH 1200V 40A TO247 |
|
FCH190N65F-F155Rochester Electronics |
MOSFET N-CH 650V 20.6A TO247 |
|
2SK326800LPanasonic |
MOSFET N-CH 100V 15A U-DL |
|
BSH202,215Nexperia |
MOSFET P-CH 30V 520MA TO236AB |
|
IXFT50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO268 |
|
RFP15N05L_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH80N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 80A TO247 |
|
STW30N80K5STMicroelectronics |
MOSFET N-CH 800V 24A TO247-3 |
|
CSD18541F5Texas Instruments |
MOSFET N-CH 60V 2.2A 3PICOSTAR |
|
IPI65R190C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.2A TO262-3 |
|
UPA2718GR-E1-ATRochester Electronics |
P-CHANNEL POWER MOSFET |