类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 63A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 65mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 6.5V @ 8mA |
栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 10000 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 780W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
供应商设备包: | SOT-227B |
包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMZ950UPE315Rochester Electronics |
P-CHANNEL MOSFET |
|
RJK0701DPP-E0#T2Rochester Electronics |
MOSFET N-CH 75V 100A TO220FP |
|
SI2343CDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 5.9A SOT23-3 |
|
DMPH3010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 60A PWRDI5060-8 |
|
FQPF13N50CRochester Electronics |
QFC 500V 480MOHM TO220F |
|
IRLR120TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
RSL020P03FRATRROHM Semiconductor |
MOSFET P-CH 30V 2A TUMT6 |
|
MCH3376-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.5A 3MCPH |
|
IXFB70N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 70A PLUS264 |
|
SIR668DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 95A PPAK SO-8 |
|
IPB60R360P7ATMA1Rochester Electronics |
IPB60R360 - 600V, 0.36OHM, N-CHA |
|
BSB044N08NN3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 18A/90A 2WDSON |
|
IPP076N15N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 112A TO220-3 |