English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 55mOhm @ 2.4A, 4.5V |
| vgs(th) (最大值) @ id: | 1.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 1 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 530mW (Ta), 6.25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SC-74, SOT-457 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD30NF06T4STMicroelectronics |
MOSFET N-CH 60V 28A DPAK |
|
FQB7N65CTMRochester Electronics |
MOSFET N-CH 650V 7A D2PAK |
|
DMT3003LFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 22A PWRDI3333 |
|
BSZ0909LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 19A/40A TSDSON |
|
IXFA18N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 18A TO263 |
|
FQU1N80TURochester Electronics |
MOSFET N-CH 800V 1A I-PAK |
|
IXTA3N150HV-TRLWickmann / Littelfuse |
MOSFET N-CH 1500V 3A TO263HV |
|
IRFR220TRPBFVishay / Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
|
IXFP80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO220AB |
|
NTTFS4C05NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12A/75A 8WDFN |
|
FQI11N40TURochester Electronics |
MOSFET N-CH 400V 11.4A I2PAK |
|
FQPF7N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6.6A TO220F |
|
TK10A80E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO220SIS |
