English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.9Ohm @ 3.3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1680 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 56W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK10A80E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO220SIS |
|
RSH100N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 10A 8SOP |
|
STO36N60M6STMicroelectronics |
MOSFET N-CH 600V 30A TOLL |
|
AUIRF3710ZRochester Electronics |
MOSFET N-CH 100V 59A TO220AB |
|
NTTFS4937NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/75A 8WDFN |
|
IXTA18P10TWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO263 |
|
MTW24N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHU2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A IPAK |
|
SIHFB20N50K-E3Vishay / Siliconix |
MOSFET N-CH 500V 20A TO220AB |
|
IRFP450LCPBFVishay / Siliconix |
MOSFET N-CH 500V 14A TO247-3 |
|
SUA70090E-E3Vishay / Siliconix |
MOSFET N-CH 100V 42.8A TO220 |
|
IPW65R115CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO247-3-41 |
|
NTD4808N-35GRochester Electronics |
MOSFET N-CH 30V 10A/63A IPAK |
