English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13.5mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4030 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC065N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 60V 64A 8TDSON |
|
BSZ019N03LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A . 40A TSDSON |
|
NVMFS5C450NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A 5DFN |
|
IRFSL4510PBFRochester Electronics |
MOSFET N-CH 100V 61A TO262 |
|
AOB360A70LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO263 |
|
FQPF7P06Rochester Electronics |
MOSFET P-CH 60V 5.3A TO220F |
|
IRF1010EPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 84A TO220AB |
|
SUD20N10-66L-GE3Vishay / Siliconix |
MOSFET N-CH 100V 16.9A TO252 |
|
STL18N55M5STMicroelectronics |
MOSFET N-CH 550V 2.4A POWERFLAT |
|
TK65G10N1,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 65A D2PAK |
|
FQA16N25CRochester Electronics |
MOSFET N-CH 250V 17.8A TO3P |
|
IRFRC20TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
DMN2022UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 7.9A 6UDFN |
