类型 | 描述 |
---|---|
系列: | MDmesh™ V |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 550 V |
电流 - 连续漏极 (id) @ 25°c: | 2.4A (Ta), 13A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 270mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1352 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 3W (Ta), 90W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (8x8) HV |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK65G10N1,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 65A D2PAK |
|
FQA16N25CRochester Electronics |
MOSFET N-CH 250V 17.8A TO3P |
|
IRFRC20TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
DMN2022UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 7.9A 6UDFN |
|
BUK7E4R3-75C,127Rochester Electronics |
MOSFET N-CH 75V 100A I2PAK |
|
FDB0105N407LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 460A TO263-7 |
|
SPD30N03S2L07GBTMA1Rochester Electronics |
MOSFET N-CH 30V 30A TO252-3 |
|
FDY302NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 600MA SC89-3 |
|
IPC100N04S51R2ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
AOT27S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 27A TO220 |
|
IRFD9110PBFVishay / Siliconix |
MOSFET P-CH 100V 700MA 4DIP |
|
SSM3J35CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CHANNEL 20V 100MA CST3 |
|
FQB9N50CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A D2PAK |