English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 550 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 7.8A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 520µA |
| 栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.42 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 114W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUZ32Rochester Electronics |
MOSFET N-CH 200V 9.5A TO220AB |
|
IRFR1N60ATRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
STB155N3LH6STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
|
AUIRLR3705ZTRRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
IRFH8318TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 27A/120A PQFN |
|
PXP011-20QXJNexperia |
PXP011-20QX/SOT8002/MLPAK33 |
|
AUIRFB3207Rochester Electronics |
MOSFET N-CH 75V 75A TO220AB |
|
BUK764R0-75C,118Nexperia |
MOSFET N-CH 75V 100A D2PAK |
|
SI4116DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 25V 18A 8SO |
|
NVTFS4C08NWFTAGRochester Electronics |
MOSFET N-CH 30V 17A 8WDFN |
|
TPH2R408QM,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 120A 8SOP |
|
RM3010Rectron USA |
MOSFET N-CHANNEL 30V 10A 8SOP |
|
2SK1167-ERochester Electronics |
N-CHANNEL POWER MOSFET |
