类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 8mOhm @ 42A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 66 nC @ 5 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 2.9 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFH8318TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 27A/120A PQFN |
|
PXP011-20QXJNexperia |
PXP011-20QX/SOT8002/MLPAK33 |
|
AUIRFB3207Rochester Electronics |
MOSFET N-CH 75V 75A TO220AB |
|
BUK764R0-75C,118Nexperia |
MOSFET N-CH 75V 100A D2PAK |
|
SI4116DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 25V 18A 8SO |
|
NVTFS4C08NWFTAGRochester Electronics |
MOSFET N-CH 30V 17A 8WDFN |
|
TPH2R408QM,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 120A 8SOP |
|
RM3010Rectron USA |
MOSFET N-CHANNEL 30V 10A 8SOP |
|
2SK1167-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0301DPB-00#J0Rochester Electronics |
MOSFET N-CH 30V 60A LFPAK |
|
AOK42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO247 |
|
NX3008NBKMB,315Nexperia |
MOSFET N-CH 30V 530MA DFN1006B-3 |
|
IRF8113PBFRochester Electronics |
HEXFET POWER MOSFET |