RES SMD 33.2 OHM 1% 1/10W 0603
MOSFET N-CHANNEL 30V 10A 8SOP
DIODE SCHOTTKY 3A 40V SMB
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 12mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1550 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK1167-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0301DPB-00#J0Rochester Electronics |
MOSFET N-CH 30V 60A LFPAK |
|
AOK42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO247 |
|
NX3008NBKMB,315Nexperia |
MOSFET N-CH 30V 530MA DFN1006B-3 |
|
IRF8113PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQI15P12TURochester Electronics |
MOSFET P-CH 120V 15A I2PAK |
|
UJ3C065080B3UnitedSiC |
MOSFET N-CH 650V 25A TO263 |
|
AOT600A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 8A TO220 |
|
UPA1820GR-9JG-E1-ARochester Electronics |
MOSFET N-CH 20V 12A 8TSSOP |
|
5LP01SP-ACRochester Electronics |
MOSFET P-CH 50V 70MA 3SPA |
|
IRL40B215IR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO220AB |
|
SQA470EJ-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.25A PPAK SC70 |
|
APT6011B2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A T-MAX |