类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 7.4A (Ta), 37A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 22mOhm @ 32A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.89 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 72W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-PAK (TO-252) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN059-150Y,115Nexperia |
MOSFET N-CH 150V 43A LFPAK56 |
|
SQ2308CES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TPN2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8TSON |
|
ISL9N302AP3Rochester Electronics |
MOSFET N-CH 30V 75A TO220-3 |
|
CSD23202W10Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
IXTA50N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO263 |
|
IPF13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO252-3 |
|
UPA2727UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 16A 8DFN |
|
IRL540NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
SI2333DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3 |
|
FQD20N06TFRochester Electronics |
MOSFET N-CH 60V 16.8A DPAK |
|
FDP032N08-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 75V 120A TO220 |
|
IRLL2705TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 3.8A SOT223 |