类型 | 描述 |
---|---|
系列: | UltraFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 49A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 22mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 75 nC @ 20 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.06 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 120W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFI840BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF260N65FL1Rochester Electronics |
MOSFET N-CH 650V 15A TO220F |
|
FDD9407L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A DPAK |
|
DMN10H099SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 17A TO252 |
|
2SK3306B-S17-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN2R5-60PL127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP4P40Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 3.5A TO220-3 |
|
FDI047AN08A0Rochester Electronics |
MOSFET N-CH 75V 80A I2PAK |
|
PHP33NQ20T,127Nexperia |
MOSFET N-CH 200V 32.7A TO220AB |
|
APT50M65B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 67A T-MAX |
|
3LP01SS-TL-HRochester Electronics |
MOSFET P-CH 30V 100MA SMCP |
|
NVF3055L108T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
AOI294AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 55A TO251A |