English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.9A (Ta), 5.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 230mOhm @ 1.9A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 215 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 15W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN2020MD-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVD5C464NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A/59A DPAK |
|
DMN21D2UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 760MA 3DFN |
|
IRF6662TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.3A DIRECTFET |
|
RTR011P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.1A TSMT3 |
|
IPA50R140CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 23A TO220-FP |
|
STP24NF10STMicroelectronics |
MOSFET N-CH 100V 26A TO220AB |
|
IPW50R199CPFKSA1Rochester Electronics |
MOSFET N-CH 550V 17A TO247-3 |
|
NTD6415AN-1GRochester Electronics |
MOSFET N-CH 100V 23A IPAK |
|
APT12060LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A TO264 |
|
EKI06051Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 85A TO220-3 |
|
BSC032N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/98A TDSON |
|
SSM3J353F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 2A S-MINI |
|
ISS17EP06LMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 300MA SOT23-3 |
