English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.9mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 345 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.75W (Ta), 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D2Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN7R6-60BS,118Nexperia |
MOSFET N-CH 60V 92A D2PAK |
|
SIR688DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
IRFBA1404PPBFRochester Electronics |
MOSFET N-CH 40V 206A SUPER-220 |
|
NTD4810N-35GRochester Electronics |
MOSFET N-CH 30V 9A/54A IPAK |
|
FQP16N15Rochester Electronics |
MOSFET N-CH 150V 16.4A TO220-3 |
|
2SK3615-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
AUIRFR024NIR (Infineon Technologies) |
MOSFET N-CH 55V 17A TO252AA |
|
FDB6670ALRochester Electronics |
MOSFET N-CH 30V 80A TO263AB |
|
APT44F80LRoving Networks / Microchip Technology |
MOSFET N-CH 800V 47A TO264 |
|
IPS70R950CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 7.4A TO251 |
|
AONS36348Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24A/50A 8DFN |
|
RM70P40LDRectron USA |
MOSFET P-CHANNEL 40V 70A TO252-2 |
|
RF1S70N06SMRochester Electronics |
N-CHANNEL POWER MOSFET |
