类型 | 描述 |
---|---|
系列: | PolarHT™ HiPerFET™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 300 V |
电流 - 连续漏极 (id) @ 25°c: | 102A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 33mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 224 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 7500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 700W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-264AA (IXFK) |
包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MCH3474-TL-ERochester Electronics |
MOSFET N-CH 30V 4A SC70FL/MCPH3 |
|
SIS108DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A/16A PPAK |
|
NTTFS4824NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.3A/69A 8WDFN |
|
FQB11N40CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A D2PAK |
|
IPD50N04S308ATMA1-INFRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STF3LN80K5STMicroelectronics |
MOSFET N-CH 800V 2A TO220FP |
|
IPB117N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 84A TO263-3 |
|
PMN120ENEAXNexperia |
MOSFET N-CH 60V 2.5A 6TSOP |
|
FQPF22N30Rochester Electronics |
MOSFET N-CH 300V 12A TO220F |
|
CPH6354-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 4A 6CPH |
|
2SK3510-AZRochester Electronics |
MOSFET N-CH 75V 83A TO220AB |
|
APT7F120BRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 7A TO247 |
|
STT5N2VH5STMicroelectronics |
MOSFET N-CH 20V SOT23-6 |