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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
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SSM3K37FS,LFToshiba Electronic Devices and Storage Corporation |
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STP5NK50ZSTMicroelectronics |
MOSFET N-CH 500V 4.4A TO220AB |
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MOSFET N-CH 600V 35A TO220-3 |
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IPW65R190E6FKSA1Rochester Electronics |
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IRFD214Vishay / Siliconix |
MOSFET N-CH 250V 450MA 4DIP |
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2SK2848Sanken Electric Co., Ltd. |
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MOSFET N-CH 60V 4.3A SUPERSOT6 |
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BUK6210-55C,118Nexperia |
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