类型 | 描述 |
---|---|
系列: | AlphaSGT™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 45 V |
电流 - 连续漏极 (id) @ 25°c: | 58A (Ta), 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.15mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 155 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10000 pF @ 22.5 V |
场效应管特征: | - |
功耗(最大值): | 7.3W (Ta), 208W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN-EP (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR120NPBFRochester Electronics |
MOSFET N-CH 100V 9.4A DPAK |
|
NTMFS6B14NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A/50A 5DFN |
|
SSM3K37FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 200MA SSM |
|
STP5NK50ZSTMicroelectronics |
MOSFET N-CH 500V 4.4A TO220AB |
|
IPP60R060C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 35A TO220-3 |
|
IPW65R190E6FKSA1Rochester Electronics |
MOSFET N-CH 650V 20.2A TO247-3 |
|
IRFD214Vishay / Siliconix |
MOSFET N-CH 250V 450MA 4DIP |
|
2SK2848Sanken Electric Co., Ltd. |
MOSFET N-CH 600V 2A TO220F |
|
IXFT24N50Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO268 |
|
FDC5661N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4.3A SUPERSOT6 |
|
BUK6210-55C,118Nexperia |
MOSFET N-CH 55V 78A DPAK |
|
STP26N65DM2STMicroelectronics |
MOSFET N-CH 650V 20A TO220 |
|
SIS406DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK1212-8 |