English
简体中文
AC/DC CONVERTER 15V 450W
GANFET N-CH 600V 17A PQFN
MOSFET N CH 30V 32A PQFN5X6
FORD 2 MIC ANALOG BOTTOM PORT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Ta), 169A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.1mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 66 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4960 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 96W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) |
| 包/箱: | 8-TQFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA50R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK6E3R4-40C,127Rochester Electronics |
PFET, 100A I(D), 40V, 0.006OHM, |
|
APT10086BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 13A TO247 |
|
APT17F100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 17A TO247 |
|
FQA44N30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 43.5A TO3PN |
|
FDD5N50FTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN4R8-100BSEJNexperia |
MOSFET N-CH 100V 120A D2PAK |
|
R5013ANXFU6ROHM Semiconductor |
MOSFET N-CH 500V 13A TO220FM |
|
BUZ31H3046XKSA1Rochester Electronics |
MOSFET N-CH 200V 14.5A TO262-3 |
|
SI1427EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 2A/2A SC70-6 |
|
IPD50R500CEBTMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
CSD13202Q2Texas Instruments |
MOSFET N-CH 12V 22A 6WSON |
|
DMN6040SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.5A 8SO |