English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 195A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.75mOhm @ 195A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 380W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZXMN3B04N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.2A 8SO |
|
3N163 SOT-143 4LLinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |
|
FQAF15N70Rochester Electronics |
MOSFET N-CH 700V 9.5A TO3PF |
|
MCH6331-TL-WRochester Electronics |
MOSFET P-CH 30V 3.5A SC88FL |
|
IXTQ120N15PWickmann / Littelfuse |
MOSFET N-CH 150V 120A TO3P |
|
NVBG020N120SC1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 8.6A/98A D2PAK |
|
DMP6350S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 1.5A SOT23 |
|
PSMN1R9-40PL127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMN23UN,135Rochester Electronics |
MOSFET N-CH 20V 6.3A 6TSOP |
|
IPZ60R041P6FKSA1Rochester Electronics |
MOSFET N-CH 600V 77.5A TO247-4 |
|
BSS119NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 190MA SOT23-3 |
|
BUZ73AE3046Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7629DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35A PPAK1212-8 |
