English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.8mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 17µA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1560 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 48W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TSDSON-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCPF11N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
FDS8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
ES6U1T2RROHM Semiconductor |
MOSFET P-CH 12V 1.3A 6WEMT |
|
SI3443DVSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A SUPERSOT6 |
|
FDB8453LZRochester Electronics |
MOSFET N-CH 40V 16.1A/50A TO263 |
|
AUIRFB8407Rochester Electronics |
MOSFET N-CH 40V 195A TO220AB |
|
HUF76633S3STRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
IPU60R3K4CEAKMA1Rochester Electronics |
MOSFET N-CH 600V 2.6A TO251-3 |
|
IRF9510PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 4A TO220AB |
|
FQU12N20TURochester Electronics |
MOSFET N-CH 200V 9A I-PAK |
|
IXTH02N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO247 |
|
STL51N3LLH5STMicroelectronics |
MOSFET N-CH 30V 51A POWERFLAT |
|
IXTA42N15T-TRLWickmann / Littelfuse |
MOSFET N-CH 150V 42A TO263 |
