English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 184mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 92 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1640 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 179W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RUC002N05T116ROHM Semiconductor |
MOSFET N-CH 50V 200MA SST3 |
|
TPS1100PWTexas Instruments |
MOSFET P-CH 15V 1.27A 8TSSOP |
|
PMV240SPRNexperia |
MOSFET P-CH 100V 1.2A TO236AB |
|
IPD110N12N3GBUMA1Rochester Electronics |
MOSFET N-CH 120V 75A TO252-3 |
|
DMN10H170SVTQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.6A TSOT26 |
|
SIHA22N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220 |
|
SIRA50DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 40V 62.5A/100A PPAK |
|
NTP5864NGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 63A TO220AB |
|
SIHB22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A D2PAK |
|
FDS3580Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7.6A 8SOIC |
|
FQP4N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3.9A TO220-3 |
|
FDMC6686PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 18A/56A 8PQFN |
|
TK7R4A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
