类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Ta), 140A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.2mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 14200 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 1.9W (Ta), 330W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (D²Pak) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
STW72N60DM2AGSTMicroelectronics |
MOSFET N-CH 600V 66A TO247 |
![]() |
BSS127SSN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 50MA SC59 |
![]() |
NTD4856NT4GRochester Electronics |
MOSFET N-CH 25V 13.3A/89A DPAK |
![]() |
STU150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
![]() |
NTPF082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO220F |
![]() |
SIA483ADJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 10.6A/12A PPAK |
![]() |
IRFD213Rochester Electronics |
MOSFET N-CH 250V 450MA 4DIP |
![]() |
IXTQ140N10PWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO3P |
![]() |
BSP373NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.8A SOT223-4 |
![]() |
IRL2703PBFRochester Electronics |
HEXFET POWER MOSFET |
![]() |
SSM3K345R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 20V 4A SOT23F |
![]() |
IXFH80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO247 |
![]() |
AOT260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 20A/140A TO220 |