English
简体中文
MOSFET N-CH 30V 80A IPAK
MOD INVERTER CCFL 4W 5V PROG
IC TRANSCEIVER FULL 2/2 16SOIC
INSULATION DISPLACEMENT SOCKET C
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VI |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.3mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4040 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTPF082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO220F |
|
SIA483ADJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 10.6A/12A PPAK |
|
IRFD213Rochester Electronics |
MOSFET N-CH 250V 450MA 4DIP |
|
IXTQ140N10PWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO3P |
|
BSP373NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.8A SOT223-4 |
|
IRL2703PBFRochester Electronics |
HEXFET POWER MOSFET |
|
SSM3K345R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 20V 4A SOT23F |
|
IXFH80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO247 |
|
AOT260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 20A/140A TO220 |
|
TJ90S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 90A DPAK |
|
IRFB4620PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 25A TO220AB |
|
IPP80N06S2H5AKSA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
RS1G120MNTBROHM Semiconductor |
MOSFET N-CH 40V 12A 8HSOP |