类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 4.5mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 4.5 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 2.2 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 45W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WPAK |
包/箱: | 8-WFDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFS59N10DPBFRochester Electronics |
MOSFET N-CH 100V 59A D2PAK |
|
SIJ478DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
TK18E10K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 18A TO220-3 |
|
MMDF3N02HDR2GRochester Electronics |
MOSFET N-CH 20V 3.8A 8SOIC |
|
IPB107N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |
|
DMTH6016LFDFW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.4A 6UDFN |
|
PSMN3R9-60PSQNexperia |
MOSFET N-CH 60V 130A TO220AB |
|
IPB020N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
SI2323DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.3A SOT-23 |
|
SSM3J133TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A UFM |
|
SI3442DVRochester Electronics |
MOSFET N-CH 20V 4.1A SUPERSOT6 |
|
SI7322DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 18A PPAK 1212-8 |
|
NTHS5441T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |