English
简体中文
HEATSINK 45.00MM X 45.00MM ALUM
MOSFET N-CH 30V 40A 8WPAK
IC SRAM 4MBIT PARALLEL 48CABGA
SENSOR PROX INDUCTIVE 15MM CYL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 4.5 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 2.2 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-WPAK |
| 包/箱: | 8-WFDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS59N10DPBFRochester Electronics |
MOSFET N-CH 100V 59A D2PAK |
|
SIJ478DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
TK18E10K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 18A TO220-3 |
|
MMDF3N02HDR2GRochester Electronics |
MOSFET N-CH 20V 3.8A 8SOIC |
|
IPB107N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |
|
DMTH6016LFDFW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.4A 6UDFN |
|
PSMN3R9-60PSQNexperia |
MOSFET N-CH 60V 130A TO220AB |
|
IPB020N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
SI2323DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.3A SOT-23 |
|
SSM3J133TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A UFM |
|
SI3442DVRochester Electronics |
MOSFET N-CH 20V 4.1A SUPERSOT6 |
|
SI7322DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 18A PPAK 1212-8 |
|
NTHS5441T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |