English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.2mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3650 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3W (Ta), 6.25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7322DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 18A PPAK1212-8 |
|
MTB10N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOB66613LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 44.5A/120A TO263 |
|
IMBG120R220M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 13A TO263 |
|
IXFP34N65X2MWickmann / Littelfuse |
MOSFET N-CH 650V 34A TO220 |
|
SI7415DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 3.6A PPAK1212-8 |
|
IPP60R165CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO220-3 |
|
IRF644STRLPBFVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
SIHS90N65E-E3Vishay / Siliconix |
MOSFET N-CH 650V 87A SUPER247 |
|
RJK4006DPD-00#J2Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NTLJS3A18PZTWGRochester Electronics |
MOSFET P-CH 20V 5A 6WDFN |
|
FQP5N30Rochester Electronics |
MOSFET N-CH 300V 5.4A TO220-3 |
|
IPP65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
